Pioneer of graphite products

A wide range of businesses supporting everything from daily life to industry. Toyo Tanso's products are used in a wide range of fields, including semiconductors, automobiles, industrial machinery, home appliances, medical equipment, and aerospace.

Advanced Power Semiconductors Sectional Meeting 2023 / 10th Lecture Material DL

Toyo Tanso will exhibit at "The 10th Seminar of Advanced Power Semiconductors Sectional Meeting" to be held at ANA Crowne Plaza Hotel Kanazawa, Japan from Thursday, November 30 to Friday, December 1, 2023. We plan to introduce various composite materials and graphite materials related to SiC semiconductors at the exhibition. The goal of the Advanced Power Semiconductors Subcommittee is to promote efficient and effective research and development of advanced power semiconductors for the next generation of innovations in energy and environmental electronics.

Official HP(JP): https://annex.jsap.or.jp/adps/scrm10/index.html

*Registration is required.

Toyo Tanso's products play an active role in the manufacturing process of semiconductor devices used in systems such as smart phones, PCs, automobiles, and home appliances that are indispensable to our daily lives. At the exhibition, you will be able to ask questions and consult directly with our staff, so please visit us if you are able.At the bottom of this page, you will find an introduction to our related products and downloadable documents. Please read to the end. If you have questions about our products, please use our web product inquiry form.

TaC-coated Graphite EVEREDKOTE™-B

EVEREDKOTE™-B is a material created by coating the surface of a highly purified graphite substrate with a fine layer of TaC (tantalum carbide) by means of a proprietary Toyo Tanso Chemical Vapor Deposition (CVD) process.

Features

- Excellent heat resistance.
- Prevents the separation and scattering of graphite powder, as well as the release of gases and impurities from the graphite substrate.
- Excellent resistance to reactions with etching gases.

Application

- Components for single crystal SiC growth
- Components for MOCVD
- High-temperature components

Properties/Test Data

■General Physical Properties

Item	Tantalum Carbide
Bulk Density	14.5Mg/㎥
Melting Point	3985℃
Hardness	1550HK
Electrical Resistivity	0.15μΩ・m
Thermal Conductivity	9 to 22 (W/m·K)
Coefficient of Thermal Expansion	7.1（106/K）

* The above numerical values are those taken from the below source and are not guaranteed values.
Source: H. Holleck: Material selection for hard coatings, J. Vac. Sci. Technol. A, Vol.4, No.6, Nov/Dec 1986

■Reactivity with Various Substances

Reactive Substance	1200℃×5h	1600℃×5h
Hydrogen Chloride	◎	◎
Ammonia	◎	◎
Hydrogen	◎	◎
Oxygen	× (600°C or more)

※◎:No reaction　×;Significant reaction

Hydrogen chloride reaction test: 20 Torr, HCl/H2 = 0.30/2.70 L/min (10%)
Ammonia reaction test: 20 Torr, NH3/H2 = 0.5/2.0 L/min (20%)
Hydrogen reaction test: 20 Torr, H2 3.0 L/min
Oxygen: Cracking and embrittlement of coating in low concentration oxidized atmosphere.

Please refer to the website and DL documents for more information.

A general product catalog is also available on the Web site.